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S29GL512P11TFI010 The Spansion S29GL512P11TFI010 is a 3V, 90nm MirrorBit Flash memory device offering fast access times and a write buffer for efficient programming. It is suitable for embedded applications.
Mfr Part #:

S29GL512P11TFI010

Available from 1 distributors
Mfr Name: Spansion
Spansion
The Spansion S29GL512P11TFI010 is a 3V, 90nm MirrorBit Flash memory device offering fast access times and a write buffer for efficient programming. It is suitable for embedded applications.
✓ Total Stock: 2,500 pcs

S29GL512P11TFI010 Available from 1 distributor

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Xingangxin ✓
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2,500 pcs
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2500 pcs On Request 1 On Request On Request On Request On Request On Request
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S29GL512P11TFI010 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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S29GL512P11TFI010 Description

Short technical summary and product information.

The Spansion S29GL512P11TFI010 is a high-performance Flash memory component fabricated using 90nm MirrorBit process technology. It provides a single 3V read, program, and erase capability with a voltage range of 2.7-3.6V. This device features a fast page access time of 25ns and a random access time as low as 90ns.

 

Key features include a 32-word/64-byte write buffer that significantly reduces programming time for multiple-word updates, making it ideal for embedded systems. The memory is organized in a uniform 64 Kword/128 Kbyte sector architecture. It also offers enhanced VersatileI/O control, allowing input and output levels to be determined by the VIO input voltage.

 

This Flash memory is designed for applications requiring higher density, better performance, and lower power consumption. It is available in 56-pin TSOP and 64-ball Fortified BGA packages, supporting surface mount applications. The device typically offers 100,000 erase cycles per sector and 20-year data retention.

S29GL512P11TFI010 Quick Information

Product Type: Flash Memory
Series: S29GL-P
Canonical Name: Spansion S29GL512P Flash Memory
Subcategory: Flash

S29GL512P11TFI010 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

S29GL512P11TFI010 Features

  • 90nm MirrorBit process technology.
  • Fast 90ns random access time.
  • 32-word/64-byte write buffer.
  • Single 3V read/program/erase operation.
  • Available in TSOP and BGA packages.

S29GL512P11TFI010 Applications

  • Ideal for embedded applications.
  • Suitable for high-density storage.
  • Offers improved performance.
  • Designed for lower power consumption.

S29GL512P11TFI010 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the S29GL512P11TFI010?

The device operates from 2.7V to 3.6V for read, program, and erase, with a VIO range of 1.65V to 3.6V.

What packages are available for this memory?

It is available in TSOP and BGA packages, surface mount.

What type of memory is the S29GL512P11TFI010?

It is a Parallel NOR Flash memory using 90nm MirrorBit technology.

What are the access times?

Page access time is 25 ns maximum; random access time is 90 ns maximum.

How many erase cycles does each sector support?

Each sector supports 100,000 erase cycles typical.

What is the typical data retention?

Typical data retention is 20 years.

What size is the write buffer?

The write buffer is 64 bytes.

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