M29W800DT-70N6E
ST
The ST M29W800DT-70N6E is an 8Mbit parallel Flash memory integrated circuit. It features a 70ns access time and is supplied in a 48-TSOP package.
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-06-29 21:33:16 |
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| SVHC Present |
The Cypress Semiconductor S29GL512P11TFI010 is a high-performance 512 Mbit page Flash memory built on 90 nm MirrorBit process technology. This device supports a single 3V power supply for read, program, and erase operations, with a voltage range of 2.7V to 3.6V. It features a fast page access time of 25 ns and a random access time as fast as 90 ns.
Key features include a 32-word/64-byte write buffer that significantly reduces programming time for multiple-word updates, making it ideal for embedded applications. The memory is organized into uniform 64 Kword/128 Kbyte sectors. It offers 100,000 erase cycles per sector typical and 20-year data retention typical.
This Flash memory is available in 56-pin TSOP and 64-ball Fortified BGA packages, supporting surface mount installation. Enhanced VersatileI/O control allows input and output levels to be determined by the VIO input voltage, ranging from 1.65V to VCC.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory type is Flash.
The operating voltage range is 2.7V to 3.6V.
The page access time is 25 ns.
The random access time is as fast as 90 ns.
The write buffer size is 64 bytes.
Each sector can withstand 100,000 erase cycles typically.
The typical data retention period is 20 years.
