S29GL512P11TFI010 The Cypress Semiconductor S29GL512P11TFI010 is a 512Mbit Parallel NOR Flash memory device. It operates from a 2.7V to 3.6V supply and features a 110 ns access time.
Mfr Part #:

S29GL512P11TFI010

Available from 3 distributors
Mfr Name: Cypress Semiconductor
Cypress Semiconductor
The Cypress Semiconductor S29GL512P11TFI010 is a 512Mbit Parallel NOR Flash memory device. It operates from a 2.7V to 3.6V supply and features a 110 ns access time.
✓ Total Stock: 23,948 pcs
$ Price Range: $1.28

S29GL512P11TFI010 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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20,748 pcs
20748 pcs On Request 1 On Request On Request 18+ On Request On Request
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1,700 pcs
1700 pcs On Request 1 On Request On Request On Request On Request On Request
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1,500 pcs
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S29GL512P11TFI010 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time

S29GL512P11TFI010 Description

Short technical summary and product information.

The Cypress Semiconductor S29GL512P11TFI010 is a 512Mbit Parallel NOR Flash memory, part of the MirrorBit family fabricated on 90 nm process technology. It offers a single 3V read/program/erase capability with a voltage range of 2.7V to 3.6V.

 

This device provides a fast page access time of 25 ns and a random access time as fast as 90 ns. It includes a 32-word/64-byte write buffer to reduce programming time for multiple-word updates, making it suitable for embedded applications requiring high density and performance.

 

The S29GL512P11TFI010 features a uniform 64 Kword/128 Kbyte sector architecture and is offered in a 56-TSOP package. It has an operating temperature range of -40°C to 85°C (TA) and typical data retention of 20 years with 100,000 erase cycles per sector.

 

Designed for reliability, it supports Suspend and Resume commands for Program and Erase operations, along with Write operation status bits to indicate completion. The device also includes an Unlock Bypass Program command to reduce programming time and support for CFI (Common Flash Interface).

S29GL512P11TFI010 Quick Information

Product Type: Flash Memory
Canonical Name: 512Mbit Parallel NOR Flash Memory
Subcategory: NOR Flash

S29GL512P11TFI010 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

S29GL512P11TFI010 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S29GL512P11TFI010 Features

  • 512Mbit Parallel NOR Flash memory.
  • Operates from 2.7V to 3.6V supply.
  • Fast 110 ns access time.
  • 56-TSOP surface mount package.
  • Wide -40°C to 85°C operating temperature.

S29GL512P11TFI010 Applications

  • Ideal for embedded systems.
  • Suitable for high-density storage.
  • Used in performance-critical applications.
  • Supports fast programming operations.

S29GL512P11TFI010 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the S29GL512P11TFI010?

The memory size is 512Mbit.

What type of memory is the S29GL512P11TFI010?

It is a Non-Volatile FLASH - NOR memory.

What is the operating voltage range for this flash memory?

The operating voltage range is 2.7V to 3.6V.

What is the access time for the S29GL512P11TFI010?

The access time is 110 ns.

What is the operating temperature range?

The operating temperature range is -40°C to 85°C (TA).

What package is the S29GL512P11TFI010 supplied in?

It is supplied in a 56-TSOP package.

What is the write buffer size?

The write buffer size is 32 words/64 bytes.

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