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S29GL512P11TAI010 The Infineon Technologies S29GL512P11TAI010 is a 512Mbit Parallel NOR Flash Memory device. It operates within a voltage range of 2.7V to 3.6V and features a 56-TSOP package.
Mfr Part #:

S29GL512P11TAI010

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies S29GL512P11TAI010 is a 512Mbit Parallel NOR Flash Memory device. It operates within a voltage range of 2.7V to 3.6V and features a 56-TSOP package.
✓ Total Stock: 2,500 pcs
$ Price Range: $1.28

S29GL512P11TAI010 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
2,500 pcs
On Request
2500 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

S29GL512P11TAI010 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Clock Frequency
Lead Style
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
SVHC Present
Supplier Device Package
Technology
Voltage
Voltage Supply
Write Cycle Time
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S29GL512P11TAI010 Description

Short technical summary and product information.

The S29GL512P11TAI010 is a 512Mbit NOR Flash memory device from Infineon Technologies, organized as 32M x 16 bits. It features a parallel memory interface with a fast 110ns access time and supports a supply voltage range of 2.7V to 3.6V. The device is designed for reliable non-volatile storage with 100,000 erase cycles per sector and a 20-year data retention.

 

The memory is housed in a 56-TSOP (Thin Small Outline Package) for surface-mount assembly and operates over an industrial temperature range of -40°C to +85°C. This makes it suitable for embedded systems, networking equipment, and other applications requiring high-density code or data storage with fast random access.

S29GL512P11TAI010 Quick Information

Product Type: Flash Memory
Series: S29GL
Canonical Name: Infineon Technologies S29GL512P11TAI010 512Mbit Parallel NOR Flash Memory
Subcategory: NOR Flash

S29GL512P11TAI010 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

S29GL512P11TAI010 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S29GL512P11TAI010 Features

  • 512Mbit NOR Flash memory density.
  • Parallel interface with 110ns access time.
  • 100,000 erase cycles per sector typical.
  • 20-year data retention for reliable storage.
  • Industrial temperature range -40°C to +85°C.

S29GL512P11TAI010 Applications

  • Firmware storage in embedded systems.
  • Code shadowing for fast processor boot.
  • Data logging in industrial controllers.
  • Configuration storage in networking equipment.

S29GL512P11TAI010 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the S29GL512P11TAI010?

The memory size is 512 Mbit.

What is the access time of this Flash memory?

The access time is 110 ns.

What is the operating voltage range?

The operating voltage range is 2.7V to 3.6V.

What is the operating temperature range?

The operating temperature range is -40°C to +85°C.

What package is the S29GL512P11TAI010 available in?

The device is available in a 56-TSOP surface-mount package.

What is the data retention of this NOR Flash?

The data retention is 20 years.

How many erase cycles per sector does it support?

It supports 100,000 erase cycles per sector.

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