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325 pcs
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325 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL512P11FFI020 is a high-performance 512Mbit Parallel NOR Flash Memory, part of the MirrorBit family. Fabricated using 90 nm MirrorBit process technology, it offers a fast page access time of 25 ns and a random access time as fast as 90 ns. This device supports a wide operating voltage range of 2.7V to 3.6V.
Key electrical characteristics include a memory organization of 32M x 16 and a write cycle time of 110 ns. It features a write buffer that allows multiple words to be programmed in one operation, enhancing programming efficiency. The memory is organized into uniform sectors, with 100,000 erase cycles per sector typical and 20-year data retention typical.
Packaged in a 64-FBGA (11x13) format, this component is designed for surface mounting. It operates within a temperature range of -40°C to 85°C (TA). The S29GL512P11FFI020 is suitable for embedded applications requiring high density, better performance, and lower power consumption.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 512Mbit.
The operating voltage range is 2.7V to 3.6V.
The nominal access time is 110 ns.
It is available in a 64-FBGA (11x13) package, also referred to as 64-LBGA.
The operating temperature range is -40°C to 85°C (TA).
Each sector can withstand approximately 100,000 erase cycles.
The typical data retention period is 20 years.