S29GL512P11FFI010 The Cypress Semiconductor S29GL512P11FFI010 is a 512Mbit Parallel NOR Flash Memory. It features a 110ns access time and operates within a 2.7V to 3.6V supply range.
Mfr Part #:

S29GL512P11FFI010

Available from 2 distributors
Mfr Name: Cypress Semiconductor
Cypress Semiconductor
The Cypress Semiconductor S29GL512P11FFI010 is a 512Mbit Parallel NOR Flash Memory. It features a 110ns access time and operates within a 2.7V to 3.6V supply range.
Total Stock: 30,582 pcs
$ Price Range: $1.28

S29GL512P11FFI010 Available from 2 distributors

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S29GL512P11FFI010 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time

S29GL512P11FFI010 Description

Short technical summary and product information.

The Cypress Semiconductor S29GL512P11FFI010 is a 512Mbit Parallel NOR Flash Memory device fabricated using 90 nm MirrorBit process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns. The device supports a write buffer allowing up to 32 words/64 bytes to be programmed in a single operation, enhancing programming efficiency for embedded applications.

 

Key electrical characteristics include a memory size of 512Mbit, parallel interface, and a voltage supply range of 2.7V to 3.6V. The memory organization is 32M x 16, with a NOR Flash technology type. It has an access time of 110 ns and a write cycle time of 110ns.

 

This flash memory is designed for embedded applications requiring high density, performance, and lower power consumption. It has a typical data retention of 20 years and 100,000 erase cycles per sector. The operating temperature range is -40°C to 85°C (TA).

 

The S29GL512P11FFI010 is available in a 64-LBGA package and is suitable for surface mount applications.

S29GL512P11FFI010 Quick Information

Product Type: Flash Memory
Series: S29GL512P
Canonical Name: Cypress Semiconductor S29GL512P11FFI010 512Mbit Parallel NOR Flash Memory
Subcategory: NOR Flash

S29GL512P11FFI010 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

S29GL512P11FFI010 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S29GL512P11FFI010 Features

  • 512Mbit non-volatile FLASH - NOR memory.
  • Parallel interface with 32M x 16 organization.
  • Operates from 2.7V to 3.6V supply voltage.
  • Features 110 ns access and write cycle times.
  • Supports -40°C to 85°C operating temperature.

S29GL512P11FFI010 Applications

  • Suitable for embedded system data storage.
  • Used in industrial control applications.
  • Ideal for automotive electronic systems.
  • Applicable in telecommunications equipment.
  • Integrated into consumer electronics devices.

S29GL512P11FFI010 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the S29GL512P11FFI010?

The S29GL512P11FFI010 has a memory size of 512Mbit.

What is the operating voltage range for the S29GL512P11FFI010?

The S29GL512P11FFI010 operates within a voltage range of 2.7V to 3.6V.

What is the operating temperature range for the S29GL512P11FFI010?

The S29GL512P11FFI010 has an operating temperature range of -40°C to 85°C.

What is the package type for the S29GL512P11FFI010?

The S29GL512P11FFI010 is supplied in a 64-LBGA package, specifically a 64-FBGA (11x13) supplier package.

What is the memory interface of the S29GL512P11FFI010?

The S29GL512P11FFI010 features a Parallel memory interface.

What is the access time of the S29GL512P11FFI010?

The S29GL512P11FFI010 has an access time of 110 ns.

What is the data retention period for the S29GL512P11FFI010?

The S29GL512P11FFI010 has a data retention period of 20 years.

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