| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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28,246 pcs
|
28246 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,336 pcs
|
2336 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Cypress Semiconductor S29GL512P11FFI010 is a 512Mbit Parallel NOR Flash Memory device fabricated using 90 nm MirrorBit process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns. The device supports a write buffer allowing up to 32 words/64 bytes to be programmed in a single operation, enhancing programming efficiency for embedded applications.
Key electrical characteristics include a memory size of 512Mbit, parallel interface, and a voltage supply range of 2.7V to 3.6V. The memory organization is 32M x 16, with a NOR Flash technology type. It has an access time of 110 ns and a write cycle time of 110ns.
This flash memory is designed for embedded applications requiring high density, performance, and lower power consumption. It has a typical data retention of 20 years and 100,000 erase cycles per sector. The operating temperature range is -40°C to 85°C (TA).
The S29GL512P11FFI010 is available in a 64-LBGA package and is suitable for surface mount applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The S29GL512P11FFI010 has a memory size of 512Mbit.
The S29GL512P11FFI010 operates within a voltage range of 2.7V to 3.6V.
The S29GL512P11FFI010 has an operating temperature range of -40°C to 85°C.
The S29GL512P11FFI010 is supplied in a 64-LBGA package, specifically a 64-FBGA (11x13) supplier package.
The S29GL512P11FFI010 features a Parallel memory interface.
The S29GL512P11FFI010 has an access time of 110 ns.
The S29GL512P11FFI010 has a data retention period of 20 years.