| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,246 pcs
|
28246 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,500 pcs
|
5500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,572 pcs
|
1572 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Cypress Semiconductor S29GL512P11FAI010 is a high-performance 512Mbit Parallel NOR Flash memory utilizing 90 nm MirrorBit process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns, making it suitable for demanding embedded applications.
This device operates from a single 3V supply (2.7-3.6 V) and features a 32-word/64-byte write buffer to reduce programming times. The memory is organized as 32M x 16 bits and uses a uniform 64 Kword/128 Kbyte sector architecture. It provides 100,000 erase cycles per sector and 20-year data retention.
The S29GL512P11FAI010 is available in a 64-ball Fortified BGA package, designed for surface mounting. Its operating temperature range is -40°C to 85°C (TA). The device supports Suspend and Resume commands for Program and Erase operations, along with write operation status bits for completion indication.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V.
64-FBGA (11x13) and 64-LBGA.
-40°C to 85°C.
512Mbit.
110ns maximum.
Parallel.
20 years.