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27 pcs
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27 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The Cypress S29GL512P10TFIR20 is a 512Mbit page flash memory product fabricated using 90nm MirrorBit process technology. This device provides a fast page access time of 25 ns and a random access time as fast as 90 ns. It is designed for embedded applications requiring high density, improved performance, and lower power consumption.
Key features include a single 3V read/program/erase capability (2.7-3.6 V) and enhanced VersatileI/O control. The integrated write buffer allows for programming up to 32 words/64 bytes in a single operation, significantly reducing overall programming time. The memory is organized into uniform 64 Kword/128 Kbyte sectors, with 100,000 erase cycles per sector typical and 20-year data retention typical.
Offered in a 56-pin TSOP package, the S29GL512P10TFIR20 supports Suspend and Resume commands for program and erase operations, along with write operation status bits to indicate completion. It also features an Unlock Bypass Program command to further reduce programming time and support for CFI (Common Flash Interface).
This flash memory is suitable for a wide range of embedded systems. Its operating temperature range is -40°C to 85°C, and it operates with a supply voltage between 2.7V and 3.6V.
The S29GL512P10TFIR20 operates with a supply voltage of 2.7-3.6V for read/program/erase, with additional regulated VCC range of 3.0-3.6V and VersatileIO VIO range of 1.65-VCC.
The S29GL512P10TFIR20 is available in a 56-TFSOP package and a 64-ball Fortified BGA package, both surface mount.
The operating temperature range is -40°C to 85°C.
Random access time is 90 ns under regulated VCC, with page access time of 25 ns. Under full VCC and VersatileIO VIO, random access time is 100 ns and 110 ns respectively.
Typical erase endurance is 100,000 cycles per sector.
Typical data retention is 20 years.
The device uses uniform 64 Kword/128 Kbyte sectors.