S29GL512P10TFIR20 The Cypress Semiconductor S29GL512P10TFIR20 is a 512Mbit Parallel NOR Flash memory device. It features a 100ns access time and operates within a 2.7V to 3.6V voltage range.
Mfr Part #:

S29GL512P10TFIR20

Available from 1 distributors
Mfr Name: Cypress Semiconductor
Cypress Semiconductor
The Cypress Semiconductor S29GL512P10TFIR20 is a 512Mbit Parallel NOR Flash memory device. It features a 100ns access time and operates within a 2.7V to 3.6V voltage range.
✓ Total Stock: 2,500 pcs
$ Price Range: $1.28

S29GL512P10TFIR20 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

S29GL512P10TFIR20 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time

S29GL512P10TFIR20 Description

Short technical summary and product information.

The Cypress Semiconductor S29GL512P10TFIR20 is a high-performance 512Mbit Parallel NOR Flash memory integrated circuit. Fabricated using 90 nm MirrorBit process technology, it offers a fast page access time of 25 ns and a random access time as fast as 90 ns. This device is designed for embedded applications requiring high density, improved performance, and lower power consumption.

 

Key electrical characteristics include a single 3V read/program/erase capability with a voltage range of 2.7V to 3.6V. It features a 32-word/64-byte write buffer to reduce programming time for multiple-word updates and an 8-word/16-byte page read buffer. The memory is organized as 32M x 16 bits and has a uniform 64 Kword/128 Kbyte sector architecture.

 

This Flash memory is housed in a 56-TSOP package, suitable for surface mount applications. It operates within an ambient temperature range of -40°C to 85°C. The device offers 100,000 erase cycles per sector typical and 20-year data retention typical, making it a reliable choice for various embedded systems.

S29GL512P10TFIR20 Quick Information

Product Type: Flash Memory
Series: S29GL
Canonical Name: Cypress Semiconductor S29GL512P10TFIR20 512Mbit Parallel NOR Flash Memory
Subcategory: NOR Flash

S29GL512P10TFIR20 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

S29GL512P10TFIR20 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S29GL512P10TFIR20 Features

  • 512Mbit Parallel NOR Flash memory.
  • Fast 90ns random access time.
  • Wide 2.7V to 3.6V operating voltage.
  • Compact 56-TSOP surface mount package.
  • 100,000 erase cycles per sector typical.

S29GL512P10TFIR20 Applications

  • Ideal for embedded system storage.
  • Suitable for high-density applications.
  • Used in performance-critical designs.
  • Reliable data retention for long-term use.

S29GL512P10TFIR20 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the S29GL512P10TFIR20?

The memory size is 512 Mbit.

What is the operating voltage range?

The operating voltage is 2.7V to 3.6V.

What is the access time?

The random access time is 90 ns.

What is the operating temperature range?

The operating temperature range is -40°C to +85°C.

What package is the S29GL512P10TFIR20 available in?

It is available in a 56-TSOP surface mount package (56-TFSOP, 0.724" width).

What is the memory organization?

The memory is organized as 32M x 16 bits.

What is the typical data retention?

The typical data retention is 20 years.

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