| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Cypress Semiconductor S29GL512P10TFIR20 is a high-performance 512Mbit Parallel NOR Flash memory integrated circuit. Fabricated using 90 nm MirrorBit process technology, it offers a fast page access time of 25 ns and a random access time as fast as 90 ns. This device is designed for embedded applications requiring high density, improved performance, and lower power consumption.
Key electrical characteristics include a single 3V read/program/erase capability with a voltage range of 2.7V to 3.6V. It features a 32-word/64-byte write buffer to reduce programming time for multiple-word updates and an 8-word/16-byte page read buffer. The memory is organized as 32M x 16 bits and has a uniform 64 Kword/128 Kbyte sector architecture.
This Flash memory is housed in a 56-TSOP package, suitable for surface mount applications. It operates within an ambient temperature range of -40°C to 85°C. The device offers 100,000 erase cycles per sector typical and 20-year data retention typical, making it a reliable choice for various embedded systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 512 Mbit.
The operating voltage is 2.7V to 3.6V.
The random access time is 90 ns.
The operating temperature range is -40°C to +85°C.
It is available in a 56-TSOP surface mount package (56-TFSOP, 0.724" width).
The memory is organized as 32M x 16 bits.
The typical data retention is 20 years.