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2,200 pcs
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2200 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The Spansion S29GL512P10TFCR10 is a high-performance 3V Page Flash Memory built on advanced 90nm MirrorBit process technology. This device is designed for embedded applications requiring high density, superior performance, and lower power consumption.
Key features include a rapid random access time as fast as 90 ns and a page access time of 25 ns. It incorporates a 32-word/64-byte write buffer, significantly reducing programming time for multiple-word updates compared to standard algorithms. The memory offers a uniform 64 Kword/128 Kbyte sector architecture and boasts typical data retention of 20 years with 100,000 erase cycles per sector.
This flash memory supports a single 3V read/program/erase operation within a 2.7-3.6 V range. It also features enhanced VersatileI/O control, where input and output levels are determined by the VIO input voltage, ranging from 1.65V to VCC. The device is available in a 64-ball Fortified BGA package, suitable for surface mount applications.
Ideal for demanding embedded systems, the S29GL512P10TFCR10 provides reliable and efficient data storage solutions.
2.7V to 3.6V.
BGA64 and TSOP.
25 ns.
90 ns.
64 Bytes.
100,000 cycles per sector.
20 years.