| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,200 pcs
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4200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Cypress Semiconductor S29GL512P10TFCR10 is a high-performance 512Mbit parallel NOR flash memory. Fabricated using 90nm MirrorBit process technology, it provides a fast page access time of 25ns and a random access time as fast as 90ns. This device features a 32-word/64-byte write buffer to enhance programming efficiency, making it suitable for demanding embedded applications.
Key electrical characteristics include a memory interface of Parallel, a memory type of Non-Volatile, and an operating voltage range of 3V to 3.6V. The memory organization is 32M x 16, with a memory size of 512Mbit. It offers a write cycle time of 100ns and an access time of 100ns.
Packaged in a 56-TSOP (0.724", 18.40mm Width) with Surface Mount technology, the S29GL512P10TFCR10 operates within a temperature range of 0°C to 85°C (TA). It boasts typical data retention of 20 years and 100,000 erase cycles per sector, ensuring reliability for long-term storage and frequent updates.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 512Mbit.
It is a Non-Volatile memory.
The memory interface is Parallel.
The operating voltage is between 3V and 3.6V.
The operating temperature range is 0°C to 85°C (TA).
It is supplied in a 56-TSOP package.
The typical data retention is 20 years.