| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,254 pcs
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7254 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Cypress Semiconductor S29GL512P10FFIR20 is a high-performance 512Mbit non-volatile memory device utilizing FLASH - NOR technology. Fabricated with 90 nm MirrorBit process technology, it offers a fast page access time of 25 ns and a random access time as fast as 90 ns.
This device operates with a single 3V read/program/erase capability, with a voltage range of 2.7V to 3.6V. It includes a 32-word/64-byte write buffer to enhance programming efficiency for multiple-word updates. The memory is organized as 32M x 16 and features a uniform 64 Kword/128 Kbyte sector architecture.
Designed for embedded applications, the S29GL512P10FFIR20 is suitable for systems requiring higher density, better performance, and lower power consumption. It is available in a 64-FBGA (11x13) package, designed for surface mount installation.
Key features include 100,000 typical erase cycles per sector and 20-year typical data retention. The device supports Suspend and Resume commands for Program and Erase operations, and includes status bits to indicate operation completion.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The S29GL512P10FFIR20 has a memory size of 512 Mbit.
The access time is 100 ns.
The operating voltage range is 2.7V to 3.6V.
The operating temperature range is -40°C to +85°C.
It comes in a 64-FBGA (11x13) package.
The memory is organized as 32M x 16.
It supports 100,000 erase cycles per sector.