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S29GL512P10FFIR10 The Cypress Semiconductor S29GL512P10FFIR10 is a 512Mbit parallel NOR Flash memory device. It operates from a 2.7V to 3.6V supply and features a 100ns access time.
Mfr Part #:

S29GL512P10FFIR10

Available from 1 distributors
Mfr Name: Cypress Semiconductor
Cypress Semiconductor
The Cypress Semiconductor S29GL512P10FFIR10 is a 512Mbit parallel NOR Flash memory device. It operates from a 2.7V to 3.6V supply and features a 100ns access time.
✓ Total Stock: 7,254 pcs
$ Price Range: $1.28

S29GL512P10FFIR10 Available from 1 distributor

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7,254 pcs
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S29GL512P10FFIR10 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Conflict Minerals
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
SVHC Present
Supplier Device Package
Technology
Voltage
Write Cycle Time
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S29GL512P10FFIR10 Description

Short technical summary and product information.

The Cypress Semiconductor S29GL512P10FFIR10 is a 512Mbit parallel NOR Flash memory integrated circuit. Fabricated using 90 nm MirrorBit process technology, this device offers a fast page access time of 25 ns and a random access time as fast as 90 ns. It operates within a voltage range of 2.7V to 3.6V.

 

Key features include a write buffer that allows up to 32 words/64 bytes to be programmed in one operation, significantly reducing programming time. The memory is organized as 32M x 16 and utilizes a uniform 64 Kword/128 Kbyte sector architecture. It is designed for embedded applications requiring high density, performance, and lower power consumption.

 

This Flash memory is available in a 64-FBGA (11x13) Surface Mount package. The operating temperature range is -40°C to 85°C (TA). It offers 100,000 erase cycles per sector typical and 20-year data retention typical.

S29GL512P10FFIR10 Quick Information

Product Type: Flash Memory
Canonical Name: 512Mbit Parallel NOR Flash Memory
Subcategory: NOR Flash

S29GL512P10FFIR10 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

S29GL512P10FFIR10 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S29GL512P10FFIR10 Features

  • 512Mbit parallel NOR Flash memory.
  • Operates from 2.7V to 3.6V supply.
  • Features 100ns access time.
  • Available in 64-FBGA surface mount package.
  • Supports 32-word/64-byte write buffer.

S29GL512P10FFIR10 Applications

  • Ideal for embedded system storage.
  • Suitable for high-density applications.
  • Provides fast read and program operations.
  • Designed for performance and low power.

S29GL512P10FFIR10 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the S29GL512P10FFIR10?

2.7V to 3.6V.

What package options are available for the S29GL512P10FFIR10?

The device is available in a 64-FBGA (11x13) package, as well as a 56-pin TSOP and a 64-ball Fortified BGA.

What is the operating temperature range of the S29GL512P10FFIR10?

-40°C to +85°C (TA).

What is the memory size of the S29GL512P10FFIR10?

512Mbit (32M x 16).

What is the access time of the S29GL512P10FFIR10?

100 ns.

What is the data retention period of the S29GL512P10FFIR10?

20 years.

What is the erase endurance of the S29GL512P10FFIR10?

100,000 erase cycles per sector.

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