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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL512N11TFI020 is a 512Mbit NOR Flash memory component designed for parallel interface applications. It operates on a single 3V power supply, supporting read, erase, and program operations within a voltage range of 2.7V to 3.6V. This device offers a 110 ns access time and is manufactured using 110 nm MirrorBit process technology.
Key features include a flexible sector architecture with 512 sectors of 64 Kword (128 Kbyte) each, and a typical data retention of 20 years with 100,000 erase cycles per sector. The memory is housed in a 56-TSOP package, suitable for surface mount applications.
This product family has been retired and is not recommended for new designs. Migration paths to S29GL-S and S29GL-T families are available. For new and current designs, consider S29GL128S, S29GL256S, and S29GL512T as superseding parts.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The device provides 512 Mbit of non-volatile NOR flash, organized as 64M x 8 or 32M x 16.
The operating voltage range is 2.7V to 3.6V, with a nominal supply of 3V.
The access time is 110ns.
It is offered in a 56-TFSOP (0.724", 18.40mm Width) surface-mount package, commonly referred to as 56-TSOP.
The device operates over -40°C to +85°C.
It supports 100,000 erase cycles per sector and has a typical data retention of 20 years.
It has 512 sectors, each 64 Kword (128 Kbyte), for flexible erase granularity.