| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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The S29GL512N10TFI020 is a high-performance 512 Mbit single power flash memory device manufactured by Advanced Micro Devices using 110 nm MirrorBit process technology. It operates at a 3.0V supply voltage for read, erase, and program operations.
This flash memory features a 100 ns access time and a 16-bit wide data bus that can also function as an 8-bit wide data bus. It is organized as 67,108,864 bytes and offers flexible sector architecture with 512 sectors of 64Kword (128 Kbyte) each. The device supports 100,000 erase cycles per sector and provides 20-year data retention.
Designed for compatibility with JEDEC standards, the S29GL512N10TFI020 offers superior inadvertent write protection. It is suitable for various applications requiring reliable and efficient non-volatile storage. The memory can be programmed in the host system or using standard EPROM programmers.
The S29GL512N10TFI020 is available in a 56-pin TSOP package, suitable for surface mount applications. It includes separate chip enable (CE#), write enable (WE#), and output enable (OE#) controls for flexible system integration.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Flash memory.
512 Mbit.
Parallel.
3 V.
100 ns.
TSOP-56.
100,000 cycles per sector.