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660 pcs
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660 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL256S90TFI020 is a 256Mbit Parallel NOR Flash Memory based on 65nm MIRRORBIT™ Eclipse technology. It offers a fast page access time of 15ns and a random access time of 90 ns, making it suitable for embedded applications requiring high performance and lower power consumption.
This device operates with a single supply voltage (VCC) ranging from 2.7V to 3.6V, with a versatile I/O voltage range (VIO) from 1.65V to VCC. It features a 512-byte programming buffer for efficient data programming and uniform 128-kbyte sectors for erase operations. The memory is organized as 16M x 16 and utilizes a parallel interface.
Key electrical characteristics include internal hardware ECC with single-bit error correction, providing data integrity. The operating temperature range is -40°C to 85°C (TA). The S29GL256S90TFI020 is supplied in a 56-TSOP package, designed for surface mounting.
With 100,000 program/erase cycles and 20 years of data retention, this flash memory is built for reliability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $11.06 | $11.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 256 Mbit.
It is a Non-Volatile Flash - NOR memory.
The operating voltage range is 2.7V to 3.6V.
The random access time is 90 ns, and the page access time is 15 ns.
The operating temperature range is -40°C to 85°C (TA).
It is supplied in a 56-TSOP package.
Yes, it features internal hardware ECC with single bit error correction.