| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,356 pcs
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2356 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL256S10TFI020 is a 256Mbit Parallel NOR Flash Memory, fabricated using 65nm MIRRORBIT™ Eclipse technology. This device offers a fast page access time of 15ns and a random access time of 90ns, making it suitable for embedded applications requiring high density and performance.
Key electrical characteristics include a versatile I/O voltage range from 1.65V to VCC, a 512-byte programming buffer for efficient data writing, and internal hardware ECC for single-bit error correction. The memory is organized as 16M x 16 and operates within a supply voltage of 2.7V to 3.6V.
This flash memory component is designed for surface mounting and comes in a 56-TSOP package. It operates within an industrial temperature range of -40°C to 85°C (TA). The device supports a program/erase cycle count of 100,000 and offers 20 years of data retention.
Ideal for applications demanding reliable and high-performance non-volatile storage, the S29GL256S10TFI020 provides a robust solution for various embedded systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 256 Mbit.
The operating voltage range is 2.7V to 3.6V.
The operating temperature range is -40°C to 85°C.
It is available in a 56-TSOP surface mount package.
The access time is 100 ns.
It supports 100,000 program/erase cycles.
The data retention period is 20 years.