| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,222 pcs
|
3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Voltage | |
| Write Cycle Time |
The Infineon Technologies S29GL256P90TFIR10 is a high-performance 256Mbit Parallel NOR Flash memory, part of the MirrorBit family fabricated using 90 nm process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns, making it suitable for demanding embedded applications.
This device operates within a voltage range of 2.7V to 3.6V and has an operating temperature range of -40°C to 85°C. It features a 32-word/64-byte write buffer to enhance programming efficiency and a uniform 64 Kword/128 Kbyte sector architecture. The memory organization is 32M x 8.
Packaged in a 56-TSOP, the S29GL256P90TFIR10 is designed for surface mounting. It provides 100,000 erase cycles per sector typical and 20-year data retention typical, ensuring reliability and longevity in various applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V.
It is available in a 56-TSOP surface mount package and a 64-ball Fortified BGA.
-40°C to 85°C (TA).
256 Mbit (32M x 8).
100 ns maximum (full VCC), 90 ns maximum (regulated VCC).
20 years.
100,000 per sector.