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S29GL256P90TFCR10 The S29GL256P90TFCR10 is a 256Mbit (32M x 8) Parallel NOR Flash memory from Infineon Technologies. It features 90ns access time and operates at 3.3V.
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S29GL256P90TFCR10

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The S29GL256P90TFCR10 is a 256Mbit (32M x 8) Parallel NOR Flash memory from Infineon Technologies. It features 90ns access time and operates at 3.3V.
✓ Total Stock: 2,000 pcs
$ Price Range: $1.28

S29GL256P90TFCR10 Available from 1 distributor

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✓ Non-Authorised
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Components Technology Group, Inc. ✓
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2,000 pcs
On Request
2000 pcs On Request 1 On Request On Request On Request On Request On Request
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S29GL256P90TFCR10 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time
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S29GL256P90TFCR10 Description

Short technical summary and product information.

The S29GL256P90TFCR10 is a 256Mbit (32M x 8) Parallel NOR Flash memory device manufactured by Infineon Technologies. It utilizes a 90nm MirrorBit process technology and offers a parallel interface for high-speed read operations. The memory is organized as 32M x 8 bits and supports a page read buffer of 8 words/16 bytes and a write buffer of 32 words/64 bytes.

 

The device operates over a supply voltage range of 2.7V to 3.6V (full VCC) with a nominal 3.3V, and a VersatileIO (VIO) range of 1.65V to VCC. Access times are 90ns (regulated VCC) and 100ns (full VCC), with a page access time of 25ns. The write cycle time is 90ns. The memory is rated for operation from 0°C to 85°C ambient temperature.

 

The S29GL256P90TFCR10 is offered in a 56-TFSOP (0.724", 18.40mm Width) package, also known as a 56-TSOP, and is available in a 64-ball Fortified BGA package. Mounting is surface mount. The sector architecture is uniform 64 Kword/128 Kbyte with typical endurance of 100,000 erase cycles per sector and 20-year data retention. This device is suitable for code storage, data logging, and other embedded applications requiring reliable non-volatile memory.

S29GL256P90TFCR10 Quick Information

Product Type: NOR Flash Memory
Series: S29GL
Canonical Name: S29GL256P90TFCR10, 256Mbit (32M x 8) Parallel NOR Flash Memory, 56-TSOP
Subcategory: Flash Memory

S29GL256P90TFCR10 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

S29GL256P90TFCR10 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S29GL256P90TFCR10 Features

  • 256Mbit (32M x 8) NOR Flash memory.
  • Parallel interface with 90ns access time.
  • Operates at 3.3V with wide voltage range.
  • Uniform 64Kword sector architecture.
  • 100,000 erase cycles per sector typical.

S29GL256P90TFCR10 Applications

  • Ideal for code storage in embedded systems.
  • Used in networking and telecommunications equipment.
  • Suitable for automotive engine control modules.
  • Provides reliable data storage for industrial controls.
  • Applicable in consumer electronics requiring fast read.

S29GL256P90TFCR10 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the S29GL256P90TFCR10?

The operating voltage is 3.3V (nominal) with a range of 2.7V to 3.6V for full VCC operation. Additionally, the VersatileIO (VIO) can range from 1.65V to VCC.

What package options are available for the S29GL256P90TFCR10?

The S29GL256P90TFCR10 is available in a 56-TFSOP (0.724", 18.40mm Width) and also in a 56-TSOP or 64-ball Fortified BGA package.

What is the operating temperature range?

The operating temperature range is 0°C to 85°C (ambient).

What is the memory size and organization?

256Mbit organized as 32M x 8.

What is the memory access time?

The access time is 90ns (regulated VCC) or 100ns (full VCC).

What is the endurance and data retention?

Typical endurance is 100,000 erase cycles per sector, and data retention is typically 20 years.

What is the sector architecture?

Uniform 64 Kword/128 Kbyte sector architecture.

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