| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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152 pcs
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152 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The Infineon S29GL256P11TFI020 is a 128 Mbit Page Flash Memory built on 90nm MirrorBit process technology. This device operates from a single 3V supply (2.7-3.6V) and provides a fast page access time of 25ns, with a random access time as fast as 90ns.
Key features include a write buffer that allows up to 64 bytes to be programmed in a single operation, significantly reducing overall programming time. The memory is organized into uniform 64 Kword sectors, offering 100,000 erase cycles per sector typically and 20-year data retention.
This flash memory is suitable for embedded applications requiring high density, improved performance, and lower power consumption. It is available in TSOP and BGA packages, supporting surface mount installation.
The S29GL256P11TFI020 supports enhanced VersatileI/O control, where input levels and outputs are determined by the VIO input voltage, ranging from 1.65V to VCC.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 2.7-3.6 V.
The page access time is 25 ns.
The random access time is as fast as 90 ns.
It uses 90 nm MirrorBit process technology.
The write buffer size is 64 Bytes.
Each sector can withstand typically 100,000 erase cycles.
The typical data retention period is 20 years.