S29GL256P11TFI020 The Infineon S29GL256P11TFI020 is a 128 Mbit 3V Page Flash Memory utilizing 90nm MirrorBit process technology. It offers fast access times and a write buffer for efficient programming.
Mfr Part #:

S29GL256P11TFI020

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon S29GL256P11TFI020 is a 128 Mbit 3V Page Flash Memory utilizing 90nm MirrorBit process technology. It offers fast access times and a write buffer for efficient programming.
✓ Total Stock: 152 pcs
$ Price Range: $1.28

S29GL256P11TFI020 Available from 1 distributor

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✓ Non-Authorised
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S29GL256P11TFI020 Specifications Quick View

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S29GL256P11TFI020 Description

Short technical summary and product information.

The Infineon S29GL256P11TFI020 is a 128 Mbit Page Flash Memory built on 90nm MirrorBit process technology. This device operates from a single 3V supply (2.7-3.6V) and provides a fast page access time of 25ns, with a random access time as fast as 90ns.

 

Key features include a write buffer that allows up to 64 bytes to be programmed in a single operation, significantly reducing overall programming time. The memory is organized into uniform 64 Kword sectors, offering 100,000 erase cycles per sector typically and 20-year data retention.

 

This flash memory is suitable for embedded applications requiring high density, improved performance, and lower power consumption. It is available in TSOP and BGA packages, supporting surface mount installation.

 

The S29GL256P11TFI020 supports enhanced VersatileI/O control, where input levels and outputs are determined by the VIO input voltage, ranging from 1.65V to VCC.

S29GL256P11TFI020 Quick Information

Product Type: Page Flash Memory
Series: S29GL256P
Canonical Name: Infineon S29GL256P11TFI020 128 Mbit 3V Page Flash Memory
Subcategory: Page Flash

S29GL256P11TFI020 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

S29GL256P11TFI020 Estimated Pricing

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1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S29GL256P11TFI020 Features

  • 128 Mbit 3V Page Flash Memory
  • 90nm MirrorBit Process Technology
  • 25ns Page Access Time
  • 90ns Random Access Time
  • 64-byte Write Buffer

S29GL256P11TFI020 Applications

  • Ideal for embedded systems
  • High-density storage needs
  • Performance-critical applications
  • Low-power embedded designs

S29GL256P11TFI020 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage for the S29GL256P11TFI020?

The operating voltage is 2.7-3.6 V.

What is the page access time of the S29GL256P11TFI020?

The page access time is 25 ns.

What is the random access time for this flash memory?

The random access time is as fast as 90 ns.

What technology is used in the S29GL256P11TFI020?

It uses 90 nm MirrorBit process technology.

What is the write buffer size?

The write buffer size is 64 Bytes.

How many erase cycles can each sector withstand?

Each sector can withstand typically 100,000 erase cycles.

What is the typical data retention period?

The typical data retention period is 20 years.

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