| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,568 pcs
|
2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Infineon Technologies S29GL256P11TFI013 is a 256Mbit Parallel NOR Flash memory integrated circuit. It is designed for embedded applications requiring high density and performance.
The device offers a memory size of 256Mbit with a parallel interface and a memory organization of 32M x 8. It features an access time of 110 ns and a write cycle time of 110 ns. The operating voltage range is from 2.7V to 3.6V, and it operates within a temperature range of -40°C to 85°C.
Fabricated using 90 nm MirrorBit process technology, this Flash memory provides a fast page access time of 25 ns and a random access time as fast as 90 ns. It includes a write buffer that allows for programming multiple words in one operation, enhancing programming efficiency. The memory is housed in a 56-TSOP package and supports surface mount technology.
Key specifications include a uniform 64 Kword/128 Kbyte sector architecture, with 100,000 typical erase cycles per sector and 20-year typical data retention. The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V.
56-TFSOP (0.724", 18.40mm Width).
-40°C to 85°C.
256Mbit.
110 ns.
Parallel.
20 years typical.