| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,680 pcs
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3680 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL256P11TFI010 is a high-performance 256Mbit MirrorBit Flash memory product fabricated using 90 nm process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns, making it suitable for demanding embedded applications.
This NOR Flash memory features a parallel interface and a memory organization of 32M x 8. It operates within a voltage range of 2.7V to 3.6V, with an access time of 110 ns and a write cycle time of 110 ns. The device supports a write buffer for efficient programming operations.
Packaged in a 56-TSOP, the S29GL256P11TFI010 is designed for surface mount applications. It operates across a temperature range of -40°C to 85°C (TA). The memory offers 20 years of data retention and typically 100,000 erase cycles per sector.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The S29GL256P11TFI010 operates within a voltage range of 2.7V to 3.6V.
The S29GL256P11TFI010 can operate in temperatures ranging from -40°C to 85°C.
The memory size of the S29GL256P11TFI010 is 256 Mbit.
The S29GL256P11TFI010 is a FLASH - NOR type memory.
The access time for the S29GL256P11TFI010 is 110 ns.
The S29GL256P11TFI010 has a data retention period of 20 years.
The S29GL256P11TFI010 can withstand 100,000 erase cycles per sector.