| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL256P11FFIV13 is a high-performance 256Mbit Parallel NOR Flash Memory designed for embedded applications. Fabricated using 90 nm MirrorBit process technology, it offers a fast page access time of 25 ns and a random access time as fast as 90 ns, with a specified access time of 110 ns.
This memory device operates from a wide voltage range of 1.65V to 3.6V, making it suitable for various power-sensitive designs. It features a uniform 64 Kword/128 Kbyte sector architecture and a 32-word/64-byte write buffer to enhance programming efficiency.
The S29GL256P11FFIV13 is available in a 64-FBGA (13x11) package, designed for surface mounting. Its operating temperature range is -40°C to 85°C (TA), ensuring reliability in demanding environments. The memory interface is parallel, and the memory organization is 32M x 8.
Key characteristics include a write cycle time of 110 ns and non-volatile memory type. This component is ideal for applications requiring high density, improved performance, and lower power consumption.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 256 Mbit.
It is a Non-Volatile memory.
The memory interface is Parallel.
The operating voltage range is 1.65V to 3.6V.
The operating temperature range is -40°C to 85°C (TA).
The access time is 110 ns.
It is supplied in a 64-FBGA (13x11) package, which is a surface mount type.