| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL256P11FFIV10 is a high-performance 256Mbit parallel NOR Flash memory device fabricated using 90 nm MirrorBit process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns, with a specified access time of 110 ns.
This memory device operates within a wide voltage range of 1.65V to 3.6V, making it suitable for various embedded applications. It features a 32-word/64-byte write buffer to reduce programming time and an 8-word/16-byte page read buffer. The memory is organized as 32M x 8 and has a uniform sector architecture of 64 Kword/128 Kbyte.
Designed for reliability, the S29GL256P11FFIV10 offers typical erase cycles of 100,000 per sector and 20-year data retention. It is available in a 64-ball Fortified BGA package and a 56-pin TSOP package, suitable for surface mount applications. The operating temperature range is -40°C to 85°C (TA).
Key features include support for CFI (Common Flash Interface), suspend and resume commands for program and erase operations, and a hardware reset input. The VersatileI/O control allows input and output levels to be determined by the VIO input voltage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 256 Mbit.
It is a Non-Volatile Flash NOR memory.
The access time is 110 ns.
The operating voltage range is 1.65V to 3.6V.
The operating temperature range is -40°C to 85°C (TA).
It is available in a 64-ball Fortified BGA package and a 56-pin TSOP package.