S29GL256P11FFIV10 The Infineon Technologies S29GL256P11FFIV10 is a 256Mbit parallel NOR Flash memory. It features a 110ns access time and operates within a voltage range of 1.65V to 3.6V.
Mfr Part #:

S29GL256P11FFIV10

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies S29GL256P11FFIV10 is a 256Mbit parallel NOR Flash memory. It features a 110ns access time and operates within a voltage range of 1.65V to 3.6V.
✓ Total Stock: 3,600 pcs
$ Price Range: $1.28

S29GL256P11FFIV10 Available from 1 distributor

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S29GL256P11FFIV10 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Technology
Voltage
Write Cycle Time

S29GL256P11FFIV10 Description

Short technical summary and product information.

The Infineon Technologies S29GL256P11FFIV10 is a high-performance 256Mbit parallel NOR Flash memory device fabricated using 90 nm MirrorBit process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns, with a specified access time of 110 ns.

 

This memory device operates within a wide voltage range of 1.65V to 3.6V, making it suitable for various embedded applications. It features a 32-word/64-byte write buffer to reduce programming time and an 8-word/16-byte page read buffer. The memory is organized as 32M x 8 and has a uniform sector architecture of 64 Kword/128 Kbyte.

 

Designed for reliability, the S29GL256P11FFIV10 offers typical erase cycles of 100,000 per sector and 20-year data retention. It is available in a 64-ball Fortified BGA package and a 56-pin TSOP package, suitable for surface mount applications. The operating temperature range is -40°C to 85°C (TA).

 

Key features include support for CFI (Common Flash Interface), suspend and resume commands for program and erase operations, and a hardware reset input. The VersatileI/O control allows input and output levels to be determined by the VIO input voltage.

S29GL256P11FFIV10 Quick Information

Product Type: Flash Memory
Series: S29GL256P
Canonical Name: Infineon Technologies S29GL256P11FFIV10 Parallel Flash Memory
Subcategory: NOR Flash

S29GL256P11FFIV10 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

S29GL256P11FFIV10 Estimated Pricing

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1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S29GL256P11FFIV10 Features

  • 256Mbit parallel NOR Flash memory.
  • 110ns maximum access time.
  • 1.65V to 3.6V operating voltage range.
  • 64-FBGA and 56-pin TSOP packages.
  • 90 nm MirrorBit process technology.

S29GL256P11FFIV10 Applications

  • Ideal for embedded systems.
  • Suitable for high-density storage.
  • Supports fast programming operations.
  • Reliable data retention for 20 years.

S29GL256P11FFIV10 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the memory size of the S29GL256P11FFIV10?

The memory size is 256 Mbit.

What type of memory is the S29GL256P11FFIV10?

It is a Non-Volatile Flash NOR memory.

What is the access time for this Flash memory?

The access time is 110 ns.

What is the operating voltage range for the S29GL256P11FFIV10?

The operating voltage range is 1.65V to 3.6V.

What is the operating temperature range?

The operating temperature range is -40°C to 85°C (TA).

What package options are available for the S29GL256P11FFIV10?

It is available in a 64-ball Fortified BGA package and a 56-pin TSOP package.

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