| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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|
4,101 pcs
|
4101 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The Cypress Semiconductor S29GL256P11FAI010 is a 256Mbit page mode Flash memory utilizing 90 nm MirrorBit process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns, with a corresponding write cycle time of 110 ns. The device operates within a voltage range of 2.7V to 3.6V.
This NOR Flash memory features a write buffer that allows up to 32 words/64 bytes to be programmed in a single operation, enhancing programming efficiency. It has a uniform sector architecture of 64 Kword/128 Kbyte and provides 100,000 erase cycles per sector typical, with 20-year data retention typical.
The S29GL256P11FAI010 is offered in a 64-FBGA (13x11) package and supports surface mount. It is designed for embedded applications requiring higher density, better performance, and lower power consumption.
Key characteristics include a memory interface of CFI and a memory organization of 16M x 16. The operating temperature range is -40°C to 85°C (TA).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 256 Mbit.
The operating voltage range is 2.7V to 3.6V.
The access time is 110 ns.
It is available in a 64-FBGA (13x11) package and a 64-LBGA package.
The operating temperature range is -40°C to 85°C (TA).
The typical page access time is 25 ns.
The typical random access time is 90 ns.