| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,336 pcs
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2336 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL256P10TFI020 is a high-performance NOR FLASH memory with a density of 256 Mbit. Fabricated using 90 nm MirrorBit process technology, it offers a fast page access time of 25 ns and a random access time as fast as 90 ns.
This memory device features a parallel interface and operates with a supply voltage ranging from 2.7V to 3.6V. Its memory organization is 32M x 8, and it includes a write buffer capable of programming up to 32 words (64 bytes) in a single operation, enhancing programming efficiency.
The S29GL256P10TFI020 is designed for embedded applications requiring high density, performance, and lower power consumption. It supports a wide operating temperature range of -40°C to 85°C (TA).
Available in a 56-TSOP package, this component is suitable for surface mount applications. It boasts typical erase cycles of 100,000 per sector and 20-year data retention.
The memory size is 256 Mbit.
It is a Non-Volatile FLASH memory.
The memory interface is Parallel.
The operating voltage is 2.7V to 3.6V.
The access time is 100 ns, with a page access time of 25 ns and random access time of 90 ns.
The operating temperature is -40°C to 85°C (TA).
It is available in a 56-TSOP package.