| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL256P10TFI010 is a high-performance 256Mbit Parallel NOR Flash Memory based on 90 nm MirrorBit process technology. It provides a fast page access time of 25 ns and a random access time as fast as 90 ns, making it suitable for demanding embedded applications.
This device features a 32-word/64-byte write buffer to reduce programming time and supports a single 3V read/program/erase operation within a 2.7V to 3.6V range. The operating temperature spans from -40°C to 85°C.
Offered in a 56-TSOP package, the S29GL256P10TFI010 is designed for surface mounting. It boasts 20-year data retention and 100,000 erase cycles per sector typical, ensuring reliability and longevity in various applications.
Key characteristics include a uniform 64 Kword/128 Kbyte sector architecture and support for CFI (Common Flash Interface). The VersatileI/O control allows input and output levels to be determined by the VIO input voltage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 256 Mbit.
It is a Non-Volatile FLASH - NOR memory.
The operating voltage range is 2.7V to 3.6V.
The operating temperature range is -40°C to 85°C.
The access time is 100 ns.
It is supplied in a 56-TSOP package.
The typical data retention is 20 years.