| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL256N11TFI020 is a 256Mbit non-volatile Flash memory with a parallel interface. Manufactured using 110 nm MirrorBit process technology, this NOR Flash memory operates from a single 3V power supply for read, erase, and program operations.
Key electrical characteristics include a 3.3V operating voltage range and a 110 ns access time. The memory is organized as 32M x 8 or 16M x 16 bits. It offers features such as 100,000 typical erase cycles per sector and 20-year typical data retention.
This device is supplied in a 56-TFSOP package suitable for surface mounting. The operating temperature range is -40°C to 85°C (TA). The S29GL256N series has been retired and is not recommended for new designs, with S29GL256S recommended as a superseding part.
This product family has been retired and is not recommended for designs. For new and current designs, S29GL128S, S29GL256S, and S29GL512T supersede the S29GL128N, S29GL256N, and S29GL512N respectively. These are the factory-recommended migration paths. Please refer to the S29GL-S and S29GL-T Family data sheets for specifications and ordering information.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 256Mbit.
The operating voltage is 2.7V to 3.6V.
The access time is 110 ns.
It is supplied in a 56-TFSOP (0.724", 18.40mm Width) package.
The operating temperature range is -40°C to 85°C (TA).
The typical data retention is 20 years.
The typical number of erase cycles per sector is 100,000.