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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL256N11FAI020 is a 256Mbit parallel NOR Flash memory integrated circuit. It is manufactured using 110 nm MirrorBit process technology and offers a typical operating voltage of 3V, with a range of 2.7V to 3.6V. This device provides a fast access time of 110 ns, making it suitable for various embedded applications.
The memory is organized as 32M x 8 or 16M x 16 bits. It features a flexible sector architecture and is compatible with JEDEC standards for single-power supply flash memory. The S29GL256N11FAI020 has a typical data retention of 20 years and can withstand 100,000 erase cycles per sector.
Packaged in a 64-FBGA (13x11) format, this component is designed for surface mount applications. It operates within a temperature range of -40°C to 85°C (TA). The product family has been retired and is not recommended for new designs, with newer series superseding it.
This NOR Flash memory is a non-volatile storage solution, ideal for applications requiring persistent data storage and program code execution in embedded systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The S29GL256N11FAI020 has a memory size of 256 Mbit.
The access time for the S29GL256N11FAI020 is 110 ns.
The operating voltage range for the S29GL256N11FAI020 is 2.7V to 3.6V.
The operating temperature range is -40°C to 85°C (TA).
The S29GL256N11FAI020 is available in a 64-FBGA (13x11) package.
The typical data retention for the S29GL256N11FAI020 is 20 years.
Each sector can withstand 100,000 erase cycles typically.