| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,569 pcs
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3569 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The S29GL256N10TFI010 from Infineon Technologies is a 256Mbit non-volatile memory device utilizing NOR Flash technology. It offers a fast 100ns access time, making it suitable for applications requiring quick data retrieval. The device operates within a voltage range of 2.7V to 3.6V and features a parallel memory interface.
Designed for surface mounting, the S29GL256N10TFI010 comes in a 56-TSOP package. This component is part of the S29GL-N family and is manufactured using 110 nm MirrorBit process technology. It provides a flexible sector architecture and compatibility with JEDEC standards, ensuring ease of integration into existing designs. The memory organization is available in 32M x 8 or 16M x 16 configurations.
With a typical data retention of 20 years and 100,000 erase cycles per sector, this Flash memory is built for reliability. Its operating temperature range is -40°C to 85°C (TA), making it suitable for a variety of environmental conditions. The S29GL256N10TFI010 is a robust solution for embedded systems requiring persistent data storage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The S29GL256N10TFI010 has a memory size of 256 Mbit.
The operating voltage range is 2.7V to 3.6V.
The access time is 100 ns.
It is supplied in a 56-TSOP package.
The operating temperature range is -40°C to 85°C (TA).
The typical data retention is 20 years.
Each sector can withstand a typical of 100,000 erase cycles.