| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,414 pcs
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1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL128P90TFIR10 is a high-performance 128Mbit parallel NOR flash memory, fabricated using 90 nm MirrorBit process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns, making it suitable for demanding embedded applications.
This device supports a single 3V read/program/erase operation with a voltage range of 2.7V to 3.6V. It includes a 32-word/64-byte write buffer to enhance programming efficiency. The memory is organized as 16M x 8 and features a uniform 64 Kword/128 Kbyte sector architecture.
Key characteristics include 100,000 typical erase cycles per sector and 20-year typical data retention. The S29GL128P90TFIR10 is available in a 56-TSOP package, designed for surface mount applications.
This flash memory is ideal for embedded systems requiring reliable, high-density storage with good performance and lower power consumption.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 128 Mbit.
The random access time is 90 ns.
The operating voltage range is 2.7V to 3.6V.
The operating temperature range is -40°C to 85°C (TA).
It is available in a 56-TSOP package.
The typical data retention is 20 years.