| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,222 pcs
|
3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL128P90TAIR10 is a 128Mbit NOR Flash memory device designed for embedded applications requiring high density and performance. Fabricated using 90 nm MirrorBit process technology, it offers a fast page access time of 25 ns and a random access time as fast as 90 ns.
This device features a 32-word/64-byte write buffer, which significantly reduces overall programming time for multiple-word updates compared to standard programming algorithms. It supports a single 3V read/program/erase operation within a voltage range of 2.7V to 3.6V. The memory is organized as 16M x 8 bits and utilizes a parallel interface for efficient data transfer.
Packaged in a 56-TSOP (0.724", 18.40mm Width), the S29GL128P90TAIR10 is suitable for surface mount applications. It operates within an ambient temperature range of -40°C to 85°C. The memory offers 100,000 erase cycles per sector typical and 20-year data retention typical, making it a reliable choice for code and data storage in various embedded systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3V to 3.6V.
56-TSOP (0.724", 18.40mm Width) surface mount package.
-40°C to 85°C (TA).
128Mbit organized as 16M x 8.
90 ns random access time and 25 ns page access time.
20 years typical.
100,000 erase cycles per sector typical.