| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL128P11TFI020 is a high-performance 128Mbit page mode Flash memory utilizing 90 nm MirrorBit process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns, with a maximum access time of 110 ns.
This device supports a single 3V read/program/erase operation within a 2.7V to 3.6V range. It features a 32-word/64-byte write buffer to reduce programming time and an 8-word/16-byte page read buffer. The memory is organized as 16M x 8 and has a uniform 64 Kword/128 Kbyte sector architecture.
Designed for embedded applications, the S29GL128P11TFI020 is available in a 56-TSOP package, suitable for surface mount applications. It operates within a temperature range of -40°C to 85°C (TA).
Key characteristics include 20-year data retention and 100,000 erase cycles per sector typical. It also supports Suspend and Resume commands for Program and Erase operations, along with Unlock Bypass Program commands.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
128 Mbit.
2.7V to 3.6V.
-40°C to 85°C.
56-TSOP (Thin Small Outline Package).
110 ns maximum at full VCC, 90 ns at regulated VCC.
100,000 erase cycles per sector.
20 years typical.