| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,750 pcs
|
5750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL128P11TFI010 is a 128Mbit parallel NOR Flash memory, part of the MirrorBit family fabricated using 90 nm process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns, with a specified access time of 110 ns.
This device operates within a voltage range of 2.7V to 3.6V and features a write buffer that allows up to 32 words/64 bytes to be programmed in a single operation, enhancing programming efficiency. The memory is organized as 16M x 8 bits and utilizes a uniform 64 Kword/128 Kbyte sector architecture.
Designed for embedded applications, the S29GL128P11TFI010 is suitable for use in environments with operating temperatures ranging from -40°C to 85°C. It is supplied in a 56-TSOP package, designed for surface mounting.
Key characteristics include a typical data retention of 20 years and 100,000 erase cycles per sector. The device supports standard programming and erase operations, with status bits indicating completion.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 128Mbit.
It is a Non-Volatile Flash - NOR memory.
The operating voltage range is 2.7V to 3.6V.
The access time is 110 ns.
The operating temperature range is -40°C to 85°C (TA).
It is supplied in a 56-TSOP package for surface mounting.
The write buffer size is 32 words/64 bytes.