S29GL128P11FFIV20 The Infineon Technologies S29GL128P11FFIV20 is a 128Mbit parallel NOR Flash memory device. It operates from a 1.65V to 3.6V supply and features a 110 ns access time.
Mfr Part #:

S29GL128P11FFIV20

Available from 1 distributors
Mfr Name: Spansion
Spansion
The Infineon Technologies S29GL128P11FFIV20 is a 128Mbit parallel NOR Flash memory device. It operates from a 1.65V to 3.6V supply and features a 110 ns access time.
✓ Total Stock: 218 pcs
$ Price Range: $1.28

S29GL128P11FFIV20 Available from 1 distributor

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✓ Non-Authorised
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218 pcs
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S29GL128P11FFIV20 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Halogen Free
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
SVHC Present
Supplier Device Package
Technology
Voltage
Write Cycle Time

S29GL128P11FFIV20 Description

Short technical summary and product information.

The Infineon Technologies S29GL128P11FFIV20 is a 128 Mbit page Flash memory utilizing 90 nm MirrorBit process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns.

 

This device supports a single 3V read/program/erase operation within a 2.7-3.6 V range and features enhanced VersatileI/O control. The write buffer allows for programming up to 32 words/64 bytes in a single operation, improving programming efficiency for embedded applications requiring higher density, better performance, and lower power consumption.

 

It is housed in a 64-LBGA package and designed for surface mount applications. The operating temperature range is -40°C to 85°C (TA). The memory is organized as 16M x 8 and offers 100,000 erase cycles per sector typical with 20-year data retention typical.

 

Key features include a uniform 64 Kword/128 Kbyte sector architecture, suspend and resume commands for program and erase operations, and support for CFI (Common Flash Interface).

S29GL128P11FFIV20 Quick Information

Product Type: Flash Memory
Series: GL-P
Canonical Name: 128 Mbit 3V Page Flash Memory
Subcategory: Parallel NOR Flash

S29GL128P11FFIV20 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

S29GL128P11FFIV20 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S29GL128P11FFIV20 Features

  • 128 Mbit parallel NOR Flash memory.
  • Operates from 1.65V to 3.6V.
  • Fast 90 ns random access time.
  • 32-word write buffer for efficient programming.
  • 64-LBGA package for surface mounting.

S29GL128P11FFIV20 Applications

  • Ideal for embedded systems.
  • Suitable for high-density applications.
  • Offers improved performance and power.
  • Supports fast programming operations.

S29GL128P11FFIV20 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the S29GL128P11FFIV20?

The memory size is 128 Mbit.

What is the operating voltage range for this flash memory?

The operating voltage range is 1.65V to 3.6V.

What is the access time for the S29GL128P11FFIV20?

The random access time is a maximum of 90 ns, and the page access time is 25 ns.

What package type is the S29GL128P11FFIV20 available in?

It is available in a 64-LBGA package.

What is the operating temperature range?

The operating temperature range is -40°C to 85°C (TA).

How many erase cycles can each sector withstand?

Each sector can withstand a typical of 100,000 erase cycles.

What is the typical data retention period for this flash memory?

The typical data retention period is 20 years.

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