| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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218 pcs
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218 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL128P11FFIV20 is a 128 Mbit page Flash memory utilizing 90 nm MirrorBit process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns.
This device supports a single 3V read/program/erase operation within a 2.7-3.6 V range and features enhanced VersatileI/O control. The write buffer allows for programming up to 32 words/64 bytes in a single operation, improving programming efficiency for embedded applications requiring higher density, better performance, and lower power consumption.
It is housed in a 64-LBGA package and designed for surface mount applications. The operating temperature range is -40°C to 85°C (TA). The memory is organized as 16M x 8 and offers 100,000 erase cycles per sector typical with 20-year data retention typical.
Key features include a uniform 64 Kword/128 Kbyte sector architecture, suspend and resume commands for program and erase operations, and support for CFI (Common Flash Interface).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 128 Mbit.
The operating voltage range is 1.65V to 3.6V.
The random access time is a maximum of 90 ns, and the page access time is 25 ns.
It is available in a 64-LBGA package.
The operating temperature range is -40°C to 85°C (TA).
Each sector can withstand a typical of 100,000 erase cycles.
The typical data retention period is 20 years.