| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,101 pcs
|
3101 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,638 pcs
|
2638 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
199 pcs
|
199 pcs | On Request | 1 | On Request | On Request | 1529+ | On Request | On Request | |
|
126 pcs
|
126 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Spansion S29GL128P10TFI010 is a 128 Mbit parallel Flash EPROM memory built on 90 nm MirrorBit process technology. It provides a fast page access time of 25 ns and a random access time as fast as 90 ns. This device supports a single 3V read/program/erase operation with a voltage range of 2.7-3.6V.
Key features include a 32-word/64-byte write buffer for faster programming and a uniform 64 Kword/128 Kbyte sector architecture. The memory is housed in a 56-pin TSOP package, suitable for surface mount applications.
With 100,000 typical erase cycles per sector and 20-year typical data retention, the S29GL128P10TFI010 is designed for embedded applications requiring density, performance, and lower power consumption.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The S29GL128P10TFI010 has a memory size of 128 Mbit.
The S29GL128P10TFI010 uses both Parallel and SPI interfaces.
The operating voltage range for the S29GL128P10TFI010 is 2.7-3.6V.
The random access time for the S29GL128P10TFI010 is 90 ns, and the page access time is 25 ns.
The S29GL128P10TFI010 typically withstands 100,000 erase cycles per sector.
The S29GL128P10TFI010 has a typical data retention period of 20 years.
The S29GL128P10TFI010 is available in a TSOP56 package for SMD mounting.