| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14,777 pcs
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14777 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL128P10FFI010 is a high-performance 128Mbit Parallel NOR Flash memory, built on 90 nm MirrorBit process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns, making it suitable for demanding embedded applications.
This device supports a single 3V read, program, and erase operation with a voltage range of 2.7V to 3.6V. It features a 32-word/64-byte write buffer to reduce programming time and a uniform 64 Kword/128 Kbyte sector architecture. The operating temperature range is -40°C to 85°C (TA).
The S29GL128P10FFI010 is available in a 64-FBGA (13x11) Surface Mount package. It provides 20-year data retention and 100,000 erase cycles per sector typical, ensuring reliability for long-term data storage.
Key features include enhanced VersatileI/O control, a secured silicon sector region for identification, and support for CFI (Common Flash Interface). Suspend and Resume commands for program and erase operations, along with write operation status bits, aid in efficient system integration.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V.
64-FBGA (13x11mm) is the primary package; also offered in 56-pin TSOP and 64-ball Fortified BGA.
-40°C to 85°C (ambient).
128Mbit, organized as 16M x 8.
100ns (90ns random access, 25ns page access).
100,000 erase cycles per sector and 20-year data retention.
Parallel.