| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,500 pcs
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5500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The S29GL128N10TFI010 from Infineon Technologies is a 128 Mbit parallel NOR Flash memory. Manufactured using 110 nm MirrorBit process technology, this device offers a 100 ns access time and a 2.7V to 3.6V operating voltage range.
Key features include a flexible sector architecture with 128 sectors of 64 Kword (128 Kbyte) each, and a secured silicon sector region for identification. It supports single power supply operation for read, erase, and program functions. The memory interface is parallel, with organization options of 16M x 8 or 8M x 16.
This Flash memory is housed in a 56-TSOP package, suitable for surface mounting. It operates within a temperature range of -40°C to 85°C (TA). The device offers typical erase cycles of 100,000 per sector and 20-year data retention.
This product family has been retired and is not recommended for new designs. For current designs, S29GL128S is the recommended migration path.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The S29GL128N10TFI010 has a memory size of 128 Mbit.
The typical access time for the S29GL128N10TFI010 is 100 ns.
The S29GL128N10TFI010 operates within a voltage range of 2.7V to 3.6V.
This Flash memory is supplied in a 56-TSOP package.
The operating temperature range is -40°C to 85°C (TA).
The typical number of erase cycles per sector is 100,000.
The typical data retention period is 20 years.