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4,361 pcs
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4361 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The S29GL032N90TFI023 is a 32-megabit NOR Flash memory device manufactured by Infineon Technologies. It is organized as 4M x 8 or 2M x 16 and uses a parallel interface for data access. This non-volatile memory is built on 110 nm MirrorBit technology, offering a 90 ns access time and a write cycle time of 90 ns.
Operating from a 2.7V to 3.6V supply, the device includes an enhanced VersatileI/O control that allows I/O voltage levels from 1.65V to VCC. It can operate over a temperature range of -40°C to +85°C, making it suitable for industrial environments. The memory features a uniform sector architecture comprising sixty-four 64 KB sectors, with a typical endurance of 100,000 erase cycles per sector and 20-year data retention.
The part is surface-mount packaged in a 56-TFSOP (0.724-inch width) package, also described as supplier device package 56-TSOP. It incorporates an 8-word/16-byte page read buffer and a 16-word/32-byte write buffer to support efficient read and programming operations. This parallel NOR Flash is intended for code storage and data storage in embedded systems requiring reliable non-volatile memory.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 2.7V to 3.6V.
It is available in a 56-TFSOP package (0.724", 18.40mm width), also known as 56-TSOP.
The operating temperature range is -40°C to +85°C (TA).
It has a memory size of 32Mbit and is organized as 4M x 8 or 2M x 16.
It uses non-volatile NOR flash technology.
The access time is 90 ns.
The typical erase endurance is 100,000 cycles per sector.