| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,000 pcs
|
31000 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Industrial Grade | |
| Interface | |
| Lead Spacing | |
| Lead Style | |
| Storage Temperature | |
| Supply Voltage | |
| Technology |
The Infineon Technologies S29GL01GT10TFI010 is a 1 Gb (128 MB) GL-T MIRRORBIT™ Flash memory product fabricated on 45-nm process technology. This parallel interface device offers a fast page access time as low as 15 ns and a random access time as fast as 100 ns.
Key features include a single supply voltage (VCC) for read, program, and erase operations ranging from 2.7 V to 3.6 V, and a versatile I/O voltage range (VIO) from 1.65 V to VCC. The device supports a x8/x16 data bus and includes a 512-byte programming buffer for efficient data programming. It also incorporates internal hardware ECC for single-bit error correction and uniform 128-KB sectors for sector erase operations.
Available in various temperature ranges including Industrial (–40°C to +85°C), Industrial Plus (–40°C to +105°C), and Extended (–40°C to +125°C), the S29GL01GT10TFI010 is suitable for demanding embedded applications. It offers 100,000 program/erase cycles and 20-year data retention.
Packaging options include 56-pin TSOP and various BGA configurations. The device is designed for applications requiring higher density, better performance, and lower power consumption.
The supply voltage range is 2.7 V to 3.6 V for read, program, and erase operations.
The device is available in TSOP, BGA, and VBU fortified BGA packages.
The industrial temperature grade range is -40°C to +85°C.
Yes, it features internal hardware ECC with single bit error correction.
20-year data retention.
512-byte programming buffer.
Asynchronous 32-byte page read.