S29GL01GT10TFI010 The Infineon Technologies S29GL01GT10TFI010 is a 1Gb parallel NOR flash memory device. It features a 100 ns access time and operates from a 2.7V to 3.6V supply.
Mfr Part #:

S29GL01GT10TFI010

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies S29GL01GT10TFI010 is a 1Gb parallel NOR flash memory device. It features a 100 ns access time and operates from a 2.7V to 3.6V supply.
✓ Total Stock: 152 pcs
$ Price Range: $1.28

S29GL01GT10TFI010 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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152 pcs
152 pcs On Request 1 On Request On Request 24+ On Request On Request

S29GL01GT10TFI010 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time

S29GL01GT10TFI010 Description

Short technical summary and product information.

The Infineon Technologies S29GL01GT10TFI010 is a 1Gb (128MB) MIRRORBIT™ flash memory product fabricated on 45-nm process technology. It offers a fast page access time as low as 15 ns and a random access time of 100 ns. This device supports a single supply voltage (VCC) for read, program, and erase operations ranging from 2.7V to 3.6V.

 

Key features include a ×8/×16 data bus, a 512-byte programming buffer for faster effective programming, and internal hardware ECC with single-bit error correction. It utilizes uniform 128-KB sectors for sector erase operations and supports suspend and resume commands for program and erase functions. The device is available in a 56-pin TSOP package.

 

Designed for embedded applications requiring higher density, better performance, and lower power consumption, the S29GL01GT10TFI010 operates within an industrial temperature range of -40°C to +85°C. It provides 100,000 program/erase cycles and 20-year data retention.

S29GL01GT10TFI010 Quick Information

Product Type: Flash Memory
Series: GL-T
Canonical Name: Infineon Technologies S29GL01GT10TFI010 1Gb Parallel NOR Flash Memory
Subcategory: NOR Flash

S29GL01GT10TFI010 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

S29GL01GT10TFI010 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S29GL01GT10TFI010 Features

  • 1Gb parallel NOR flash memory.
  • Fast 100 ns random access time.
  • Wide 2.7V to 3.6V supply voltage.
  • 512-byte programming buffer.
  • Industrial temperature range (-40°C to +85°C).

S29GL01GT10TFI010 Applications

  • Ideal for embedded systems.
  • Suitable for high-density storage.
  • Provides reliable non-volatile data.
  • Supports fast programming operations.

S29GL01GT10TFI010 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the S29GL01GT10TFI010?

2.7V to 3.6V.

What package is the S29GL01GT10TFI010 available in?

56-pin TSOP (Thin Small Outline Package) with 0.724 inch (18.40mm) width.

What is the operating temperature range of the S29GL01GT10TFI010?

Industrial temperature range: -40°C to +85°C.

What is the memory organization of the S29GL01GT10TFI010?

128M x 8.

What is the access time of the S29GL01GT10TFI010?

100 ns maximum.

Does the S29GL01GT10TFI010 support error correction?

Yes, internal hardware ECC with single bit error correction.

What is the write cycle time of the S29GL01GT10TFI010?

60 ns.

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