| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,658 pcs
|
4658 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| AEC Qualified | |
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| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
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| Military Grade | |
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| Tape & Reel | |
| Technology |
The S29GL01GS11WEI029 from Infineon Technologies is a high-density 1Gbit Parallel NOR Flash memory. Designed for non-volatile storage, this memory chip utilizes FLASH - NOR technology.
Key electrical specifications include a supply voltage range of 2.7V to 3.6V, an access time of 110 ns, and a word/page write cycle time of 60 ns. The memory organization is 64M x 16 bits, providing ample storage capacity for various applications.
This component operates within an ambient temperature range of -40°C to 85°C. It is supplied in a Die package and is designed for surface mount applications. The device is RoHS3 compliant, indicating adherence to environmental standards.
Ideal for embedded systems requiring reliable non-volatile data storage, the S29GL01GS11WEI029 offers a balance of performance and capacity. Its parallel interface simplifies integration into existing designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $60.15 | $60.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 1 Gbit.
It is a Non-Volatile FLASH - NOR memory.
The access time is 110 ns.
The supply voltage range is 2.7V to 3.6V.
The operating temperature range is -40°C to 85°C.
It is supplied in a Die package.
Yes, it is RoHS3 Compliant.