| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL01GS11FHIV20 is a 1Gbit Parallel FLASH NOR Memory utilizing 65 nm MIRRORBIT™ Eclipse technology. This device offers a fast page access time as low as 15ns and a random access time of 90 ns. It is designed for embedded applications requiring high density, performance, and lower power consumption.
Key electrical characteristics include a 1Gbit memory size, non-volatile memory type, parallel interface, and FLASH format. The memory organization is 64M x 16. It operates with a versatile I/O voltage range from 1.65V to VCC and a core voltage of 3.0V. The access time is rated at 110 ns, with a write cycle time of 60 ns. The device includes a 512-byte programming buffer and supports sector erase operations with uniform 128-kbyte sectors.
This component is fabricated using 65 nm process technology and features internal hardware ECC for single-bit error correction. It supports suspend and resume commands for program and erase operations, along with advanced sector protection. The operating temperature range is -40°C to 85°C (TA).
The S29GL01GS11FHIV20 is available in a 64-LBGA package and supports Surface Mount mounting type.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 1 Gbit.
It is a Non-Volatile memory.
The memory interface is Parallel.
The operating voltage range is 1.65 V to 3.6 V.
The operating temperature range is -40°C to 85°C.
The access time is 110 ns.
The package type is 64-LBGA.