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S29GL01GS11DHI010 The Infineon Technologies S29GL01GS11DHI010 is a 1Gbit Parallel NOR Flash memory device. It operates with a voltage range of 2.7V to 3.6V and features a fast 110ns access time.
Mfr Part #:

S29GL01GS11DHI010

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies S29GL01GS11DHI010 is a 1Gbit Parallel NOR Flash memory device. It operates with a voltage range of 2.7V to 3.6V and features a fast 110ns access time.
✓ Total Stock: 4,512 pcs
$ Price Range: $1.28

S29GL01GS11DHI010 Available from 1 distributor

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✓ Non-Authorised
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Components Technology Group, Inc. ✓
Non-Authorised Inventory information
4,512 pcs
On Request
4512 pcs On Request 1 On Request On Request On Request On Request On Request
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S29GL01GS11DHI010 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Operating Voltage
Supplier Device Package
Technology
Voltage
Write Cycle Time
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S29GL01GS11DHI010 Description

Short technical summary and product information.

The Infineon Technologies S29GL01GS11DHI010 is a 1Gbit Parallel NOR Flash memory, part of the GL-S MIRRORBIT™ Eclipse family. Fabricated using 65nm process technology, it offers high performance with a page access time as fast as 15ns and a random access time of 90 ns. This device is designed for embedded applications requiring high density, better performance, and lower power consumption.

 

Key electrical characteristics include a versatile I/O voltage range from 1.65V to VCC and a single supply voltage (VCC) for read, program, and erase operations ranging from 2.7V to 3.6V. It features a 512-byte programming buffer for faster effective programming times and internal hardware ECC for single-bit error correction. The memory is organized as 64M x 16 and uses a parallel interface.

 

This flash memory is available in a 64-FBGA (9x9) Surface Mount package. It operates within an industrial temperature range of -40°C to 85°C (TA). The device offers 100,000 program/erase cycles and 20 years of data retention, making it suitable for demanding applications.

S29GL01GS11DHI010 Quick Information

Product Type: Flash Memory
Series: Eclipse
Canonical Name: Infineon Technologies S29GL01GS11DHI010 1Gbit Parallel NOR Flash Memory
Subcategory: NOR Flash

S29GL01GS11DHI010 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

S29GL01GS11DHI010 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S29GL01GS11DHI010 Features

  • 1Gbit Parallel NOR Flash memory.
  • Operates from 2.7V to 3.6V supply.
  • Fast 110ns access time.
  • 64-FBGA Surface Mount package.
  • Industrial temperature range: -40°C to 85°C.

S29GL01GS11DHI010 Applications

  • Code storage for embedded systems.
  • Data logging in industrial applications.
  • Firmware storage in networking equipment.
  • Boot memory for automotive control modules.

S29GL01GS11DHI010 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the S29GL01GS11DHI010?

The S29GL01GS11DHI010 has a memory size of 1 Gbit.

What is the operating voltage range?

The device operates from 2.7V to 3.6V.

What is the operating temperature range?

The industrial temperature range is -40°C to +85°C.

What package is the S29GL01GS11DHI010 available in?

It is available in a 64-ball FBGA (9x9 mm) package.

What is the access time?

The random access time is 110 ns.

Does the S29GL01GS11DHI010 support ECC?

Yes, it includes internal hardware ECC with single bit error correction.

What is the data retention of this flash memory?

The data retention is 20 years.

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