| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,775 pcs
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5775 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The Infineon S29GL01GS11DHA023 is a high-performance 128 Mb MIRRORBIT Eclipse flash memory device fabricated using 65 nm process technology. It operates with a 3.0 V core voltage and supports a versatile I/O voltage range from 1.65 V to VCC. This parallel flash memory features a fast page access time of 15 ns and a random access time of 90 ns, making it suitable for demanding embedded applications.
Key features include a 512-byte programming buffer for efficient data writes, internal hardware ECC for single-bit error correction, and uniform 128-kbyte sectors for flexible memory management. The device supports suspend and resume commands for program and erase operations, along with advanced sector protection methods. It is rated for an industrial temperature range of -40°C to +85°C and offers 100,000 program/erase cycles with 20 years of data retention.
Available in TSOP and BGA packages, the S29GL01GS11DHA023 is designed for surface mount applications. Its combination of speed, density, and reliability makes it an ideal choice for embedded systems requiring robust and efficient non-volatile storage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum page access time is 15 ns.
The maximum random access time is 90 ns.
The supply voltage range is 2.7 V to 3.6 V.
The operating temperature range is -40°C to +85°C.
It supports 100,000 program/erase cycles.
The data retention period is 20 years.
It offers a 512-byte programming buffer.