| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
5,775 pcs
$19.95
|
5775 pcs |
$19.95
|
1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL01GS11DHA023 is a 1Gbit MIRRORBIT™ Eclipse NOR Flash Memory fabricated using 65nm process technology. It offers a fast page access time as low as 15ns and a random access time as fast as 90 ns. This device is designed for embedded applications requiring high density, performance, and lower power consumption.
Key electrical characteristics include a 2.7V to 3.6V supply voltage range and a versatile I/O voltage range from 1.65V to VCC. It features a 512-byte programming buffer for efficient programming and uniform 128-kbyte sectors for erase operations. The memory includes internal hardware ECC for single-bit error correction and supports suspend/resume commands for program and erase operations.
Available in a 64-FBGA (9x9) package, this flash memory is suitable for surface mount applications. It operates within an industrial temperature range of -40°C to 85°C and offers 100,000 program/erase cycles with 20 years of data retention.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range for read, program, and erase is 2.7V to 3.6V.
The device is available in a 64-LBGA package, also supplied as 64-FBGA (9x9 mm).
Industrial grade: -40°C to 85°C; Industrial plus: -40°C to 105°C; Automotive AEC-Q100 grade 3: -40°C to 85°C; Automotive AEC-Q100 grade 2: -40°C to 105°C.
Maximum access time is 110 ns with VersatileIO VIO, or 100 ns when VCC equals VIO.
The memory size is 1 Gbit.
The device supports 100,000 program/erase cycles.
Data retention is 20 years.