| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,276 pcs
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4276 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
312 pcs
|
312 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Spansion S29GL01GS10TFI010 is a 128 Mb Parallel NOR Flash Memory from the GL-S MIRRORBIT™ Eclipse series, built on 65-nm process technology. It offers fast page access times as low as 15ns and random access times of 90 ns, making it suitable for demanding embedded applications.
This device features a single 3.0V supply for read, program, and erase operations, with a versatile I/O voltage range. It includes a 512-byte programming buffer for faster effective programming and uniform 128-kbyte sectors for efficient erasing. The memory also incorporates internal hardware ECC for single-bit error correction.
Available in TSOP and BGA packages, the S29GL01GS10TFI010 supports industrial and automotive temperature ranges. It is designed for applications requiring high density, better performance, and lower power consumption, offering 100,000 program/erase cycles and 20 years of data retention.
The device requires a single supply voltage of 2.7V to 3.6V for read, program, and erase operations, with a 3.0V CMOS core.
The S29GL01GS10TFI010 is available in TSOP and BGA surface-mount packages.
The memory guarantees a data retention period of 20 years.
It features internal hardware ECC that automatically corrects single-bit errors.
The device supports up to 100,000 program and erase cycles.