| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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46 pcs
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46 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Infineon Technologies S29GL01GS10TFI010 is a high-performance 1Gbit Parallel NOR Flash memory based on 65nm MIRRORBIT™ Eclipse technology. It offers a fast page access time of 15ns and a random access time of 90ns, making it suitable for demanding embedded applications.
This device operates with a single supply voltage (VCC) ranging from 2.7V to 3.6V, with versatile I/O voltage support from 1.65V to VCC. It features a ×16 data bus and a 512-byte programming buffer for efficient data writes. The memory is organized as 64M x 16 and utilizes uniform 128-kbyte sectors for erase operations.
Designed for reliability, the S29GL01GS10TFI010 includes internal hardware ECC for single-bit error correction and supports Advanced Sector Protection (ASP). It is rated for an operating temperature range of -40°C to 85°C (TA) and offers 100,000 program/erase cycles with 20 years of data retention.
The component is available in a 56-TSOP package, suitable for surface mounting. Its robust design and performance characteristics make it an ideal choice for various embedded systems requiring reliable and fast non-volatile storage.
| Qty | Low | High |
|---|---|---|
| 1+ | $21.41 | $21.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 1 Gbit.
It uses FLASH - NOR technology.
The operating voltage range is 2.7V to 3.6V.
The maximum access time is 100 ns.
The operating temperature range is -40°C to 85°C (TA).
It is supplied in a 56-TSOP package.
Yes, it features internal hardware ECC with single bit error correction.