S29GL01GP13TFIV10 The Spansion S29GL01GP13TFIV10 is a 128 Mbit page Flash memory utilizing 90nm MirrorBit process technology. It offers fast access times and a write buffer for efficient programming.
Mfr Part #:

S29GL01GP13TFIV10

Available from 2 distributors
Mfr Name: Spansion
Spansion
The Spansion S29GL01GP13TFIV10 is a 128 Mbit page Flash memory utilizing 90nm MirrorBit process technology. It offers fast access times and a write buffer for efficient programming.
Total Stock: 6,873 pcs

S29GL01GP13TFIV10 Available from 2 distributors

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6,300 pcs
6300 pcs On Request 1 On Request On Request 09+ On Request On Request
Non-Authorised Inventory information
573 pcs
573 pcs On Request 1 On Request On Request 09+ On Request On Request

S29GL01GP13TFIV10 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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S29GL01GP13TFIV10 Description

Short technical summary and product information.

The Spansion S29GL01GP13TFIV10 is a high-performance page Flash memory device based on the 90nm MirrorBit process technology. It provides a density of 128 Mbit and operates from a single 3V supply (2.7-3.6 V).

 

Key electrical characteristics include a fast page access time of 25 ns and a random access time as fast as 90 ns. The device features a 32-word/64-byte write buffer, which significantly reduces overall programming time for multiple-word updates, making it ideal for embedded applications requiring higher density and better performance.

 

This Flash memory offers a uniform 64 Kword/128 Kbyte sector architecture and supports a typical 100,000 erase cycles per sector with 20-year data retention. It is available in 56-pin TSOP and 64-ball Fortified BGA packages, suitable for surface mount applications.

 

The S29GL01GP13TFIV10 also incorporates enhanced Versatile I/O control, where input levels and outputs are determined by the VIO input voltage, ranging from 1.65V to VCC. It supports Suspend and Resume commands for program and erase operations, along with write operation status bits for completion indication.

S29GL01GP13TFIV10 Quick Information

Product Type: Flash Memory
Series: S29GL-P
Canonical Name: S29GL01GP13TFIV10 128 Mbit, 3 V, Page Flash Memory
Subcategory: Flash Memory

S29GL01GP13TFIV10 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

S29GL01GP13TFIV10 Features

  • 128 Mbit page Flash memory.
  • 90nm MirrorBit process technology.
  • Fast 25ns page access time.
  • 64-byte write buffer for efficient programming.
  • 2.7V to 3.6V single supply operation.

S29GL01GP13TFIV10 Applications

  • Ideal for embedded applications.
  • Suitable for high-density storage needs.
  • Supports fast programming requirements.
  • Designed for performance-driven systems.

S29GL01GP13TFIV10 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the S29GL01GP13TFIV10?

The device supports a VCC range of 2.7V to 3.6V, with a regulated VCC mode of 3.0V to 3.6V. The Versatile I/O (VIO) range is 1.65V to VCC when VCC is 2.7-3.6V.

What package options are available for the S29GL01GP13TFIV10?

The device is available in TSOP and BGA packages, both surface mount.

What is the erase endurance of the S29GL01GP13TFIV10?

The device supports 100,000 erase cycles per sector typical.

What is the data retention of the S29GL01GP13TFIV10?

The device offers 20-year data retention typical.

What are the access times for the S29GL01GP13TFIV10?

Random access time is 90 ns (regulated VCC), page access time is 25 ns, and output enable access time is 25 ns.

What is the write buffer size of the S29GL01GP13TFIV10?

The device has a 64-byte write buffer.

What is the sector architecture of the S29GL01GP13TFIV10?

The device uses uniform 64 Kword (128 Kbyte) sectors.

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