| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,300 pcs
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6300 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
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573 pcs
|
573 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The Spansion S29GL01GP13TFIV10 is a high-performance page Flash memory device based on the 90nm MirrorBit process technology. It provides a density of 128 Mbit and operates from a single 3V supply (2.7-3.6 V).
Key electrical characteristics include a fast page access time of 25 ns and a random access time as fast as 90 ns. The device features a 32-word/64-byte write buffer, which significantly reduces overall programming time for multiple-word updates, making it ideal for embedded applications requiring higher density and better performance.
This Flash memory offers a uniform 64 Kword/128 Kbyte sector architecture and supports a typical 100,000 erase cycles per sector with 20-year data retention. It is available in 56-pin TSOP and 64-ball Fortified BGA packages, suitable for surface mount applications.
The S29GL01GP13TFIV10 also incorporates enhanced Versatile I/O control, where input levels and outputs are determined by the VIO input voltage, ranging from 1.65V to VCC. It supports Suspend and Resume commands for program and erase operations, along with write operation status bits for completion indication.
The device supports a VCC range of 2.7V to 3.6V, with a regulated VCC mode of 3.0V to 3.6V. The Versatile I/O (VIO) range is 1.65V to VCC when VCC is 2.7-3.6V.
The device is available in TSOP and BGA packages, both surface mount.
The device supports 100,000 erase cycles per sector typical.
The device offers 20-year data retention typical.
Random access time is 90 ns (regulated VCC), page access time is 25 ns, and output enable access time is 25 ns.
The device has a 64-byte write buffer.
The device uses uniform 64 Kword (128 Kbyte) sectors.