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S29GL01GP13TFIV10 The Cypress Semiconductor S29GL01GP13TFIV10 is a 1 Gbit parallel NOR Flash memory device. It operates with a voltage range of 1.65V to 3.6V and features a 90 ns access time.
Mfr Part #:

S29GL01GP13TFIV10

Available from 2 distributors
Mfr Name: Cypress Semiconductor
Cypress Semiconductor
The Cypress Semiconductor S29GL01GP13TFIV10 is a 1 Gbit parallel NOR Flash memory device. It operates with a voltage range of 1.65V to 3.6V and features a 90 ns access time.
✓ Total Stock: 3,611 pcs
$ Price Range: $1.28

S29GL01GP13TFIV10 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,600 pcs
On Request
3600 pcs On Request 1 On Request On Request On Request On Request On Request
Speed Components Ltd ✓
Non-Authorised Inventory information
11 pcs
On Request
11 pcs On Request 1 On Request On Request 1617 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

S29GL01GP13TFIV10 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Lead Style
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
SVHC Present
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time
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S29GL01GP13TFIV10 Description

Short technical summary and product information.

The Cypress Semiconductor S29GL01GP13TFIV10 is a 1 Gbit MirrorBit® Flash memory product fabricated using 90 nm process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns. The device features a write buffer that allows up to 32 words/64 bytes to be programmed in a single operation, enhancing programming efficiency for embedded applications.

 

This Flash memory operates within a voltage range of 1.65V to 3.6V and is housed in a 56-TSOP package, suitable for surface mounting. It provides a memory organization of 128M x 8 and a memory interface of Parallel. The typical erase cycles are 100,000 per sector, with a data retention of 20 years.

 

Ideal for embedded systems requiring high density, performance, and lower power consumption, the S29GL01GP13TFIV10 supports features like Suspend and Resume commands for program and erase operations, and an Unlock Bypass Program command to reduce programming time.

S29GL01GP13TFIV10 Quick Information

Product Type: Flash Memory
Series: S29GL
Canonical Name: Cypress Semiconductor S29GL01GP13TFIV10 1 Gbit Parallel NOR Flash Memory
Subcategory: NOR Flash

S29GL01GP13TFIV10 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

S29GL01GP13TFIV10 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S29GL01GP13TFIV10 Features

  • 1 Gbit parallel NOR Flash memory.
  • 90 nm MirrorBit process technology.
  • Fast 90 ns random access time.
  • Wide 1.65V to 3.6V operating voltage.
  • Surface mount 56-TSOP package.

S29GL01GP13TFIV10 Applications

  • Used in embedded system code storage.
  • Suitable for industrial control applications.
  • Ideal for networking equipment firmware.
  • Used in automotive infotainment systems.

S29GL01GP13TFIV10 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the S29GL01GP13TFIV10?

The operating voltage range is 1.65V to 3.6V.

What is the access time of this flash memory?

The maximum random access time is 90 ns.

What package does the S29GL01GP13TFIV10 come in?

It is available in a 56-TSOP (Thin Small Outline Package) with a 0.724 inch body width.

What is the operating temperature range?

The operating temperature range is -40°C to +85°C.

How many erase cycles does this device support?

It supports 100,000 erase cycles per sector.

What is the data retention period?

The typical data retention is 20 years.

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